David Kirkpatrick

August 19, 2008

World’s smallest SRAM

From KurzweilAI.net — just wow!

Kudos to IBM, AMD, Freescale STMicroelectronics, Toshiba and CNSE

Researchers Build World’s Smallest SRAM Memory Cell
PhysOrg.com, Aug. 18, 2008

IBM and its development partners — AMD, Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering (CNSE) — have announced the first working static random access memory (SRAM) for the 22 nanometer technology node.

The new SRAM cell (basic building block) has an area of 100 square nanometers, breaking the previous SRAM scaling barriers.

Key enablers of the SRAM cell include band edge high-K metal gate stacks, transistors with less than 25 nm gate lengths, thin spacers, novel co-implants, advanced activation techniques, extremely thin silicide, and damascene copper contacts.

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